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Terahertz Detector Utilizing Two-dimensional Electronic Fluid - IEEE  Electron Device Letters
Terahertz Detector Utilizing Two-dimensional Electronic Fluid - IEEE Electron Device Letters

PDF) Lo, S.-H , Buchanan, D. A. , Taur, Y. & Wang, W. Quantum-mechanical  modeling of electron tunneling current from the inversion layer of  ultra-thin-oxide nMOSFETs. IEEE Electron Device Lett. 18, 209-211
PDF) Lo, S.-H , Buchanan, D. A. , Taur, Y. & Wang, W. Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFETs. IEEE Electron Device Lett. 18, 209-211

Issue Image no(s) - IEEE Electron Device Letters
Issue Image no(s) - IEEE Electron Device Letters

IEEE Electeon Device Letters February 2003 Vol 24 Num 2 | eBay
IEEE Electeon Device Letters February 2003 Vol 24 Num 2 | eBay

PDF] IEEE Electron Device Letters information for authors by ·  10.1109/led.2017.2701659 · OA.mg
PDF] IEEE Electron Device Letters information for authors by · 10.1109/led.2017.2701659 · OA.mg

IEEE Electron Devices Society - Each month, the Editors of the IEEE  Electron Device Letters select a small number of particularly remarkable  articles as Editors' Picks, one of which is on the
IEEE Electron Devices Society - Each month, the Editors of the IEEE Electron Device Letters select a small number of particularly remarkable articles as Editors' Picks, one of which is on the

A Lateral AlGaN/GaN Schottky Barrier Diode with 0.36 V Turn-on Voltage and  10 kV Breakdown Voltage by Using Double Barrier Anode
A Lateral AlGaN/GaN Schottky Barrier Diode with 0.36 V Turn-on Voltage and 10 kV Breakdown Voltage by Using Double Barrier Anode

High Resolution Fabrication of Josephson Microbridges
High Resolution Fabrication of Josephson Microbridges

IEEE ELECTRON DEVICE LETTERS, VOL. 36, NO. 7
IEEE ELECTRON DEVICE LETTERS, VOL. 36, NO. 7

IEEE Electron Device Letters template - For Authors
IEEE Electron Device Letters template - For Authors

IEEE Electron Device Letters information for authors
IEEE Electron Device Letters information for authors

All-Two-Dimensional-Material Hot Electron Transistor | Nature Portfolio  Engineering Community
All-Two-Dimensional-Material Hot Electron Transistor | Nature Portfolio Engineering Community

The Inverse-Narrow-Width Effect: Ieee Electron Device Letters, Vol. Edl-I,  No. JULY 1986 419 | PDF | Mosfet | Field Effect Transistor
The Inverse-Narrow-Width Effect: Ieee Electron Device Letters, Vol. Edl-I, No. JULY 1986 419 | PDF | Mosfet | Field Effect Transistor

PDF) Investigation of the RTN Distribution of Nanoscale MOS Devices From  Subthreshold to On-State
PDF) Investigation of the RTN Distribution of Nanoscale MOS Devices From Subthreshold to On-State

IEEE Electron Device Letters Referencing Guide · IEEE Electron Device  Letters citation (updated Jun 01 2023) · Citationsy
IEEE Electron Device Letters Referencing Guide · IEEE Electron Device Letters citation (updated Jun 01 2023) · Citationsy

IEEE Electron Device Letters template - For Authors
IEEE Electron Device Letters template - For Authors

An all-electrical floating-gate transmission line model technique for  measuring source resistance in - Electron Devices, IEEE Tr
An all-electrical floating-gate transmission line model technique for measuring source resistance in - Electron Devices, IEEE Tr

PDF) All-Silicon Microdisplay Using Efficient Hot-Carrier  Electroluminescence in Standard 0.18μm CMOS Technology
PDF) All-Silicon Microdisplay Using Efficient Hot-Carrier Electroluminescence in Standard 0.18μm CMOS Technology

Publications - IEEE Electron Devices Society
Publications - IEEE Electron Devices Society

PDF) Front cover - IEEE Electron Device Letters ( Volume: 42, Issue: 10,  Oct. 2021)
PDF) Front cover - IEEE Electron Device Letters ( Volume: 42, Issue: 10, Oct. 2021)

Back cover]
Back cover]

Prihvaćen rad u IEEE Electron Device Letters - Obavijesti - CONAN2D - HRZZ  projekt
Prihvaćen rad u IEEE Electron Device Letters - Obavijesti - CONAN2D - HRZZ projekt

Articles - Nano Electronics
Articles - Nano Electronics

IEEE Electron Device Letters impact factor and... | Exaly
IEEE Electron Device Letters impact factor and... | Exaly